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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1597-1600

Defects in zinc-implanted ZnO thin films

(11) Schmidt, Matthias a Ellguth, Martin a Czekalla, Christian a V Wenckstern, Holger a Pickenhain, Rainer a Grundmann, Marius a Brauer, Gerhard b Skorupa, Wolfgang b Helm, Manfred b Gu, Qilin c,d Ling, Chi Chung c

a UNIVERSITY OF LEIPZIG (Germany)

b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

c UNIVERSITY OF HONG KONG (Hong Kong)

d The Ohio State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON MOBILITY; METALLIC FILMS; OPTICAL FILMS; PHOTOLUMINESCENCE SPECTROSCOPY; THIN FILMS; ZINC; ZINC OXIDE;

CAPACITANCE-VOLTAGE SPECTROSCOPY; CONDUCTION BAND EDGE; DLTS; DONOR STATE; IMPLANTED SAMPLES; PL SPECTRA; THERMAL ADMITTANCE SPECTROSCOPY; ZINC IMPLANTATION; ZNO THIN FILM;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 77955231558 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3086659 Document Type: Conference Paper

Times cited : (12)

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