Carrier concentration tuning of bandgap-reduced p -type ZnO films by codoping of Cu and Ga for improving photoelectrochemical response

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Shet, Sudhakar ^a,b   Ahn, Kwang Soon ^a   Yan, Yanfa ^a   Deutsch, Todd ^a   Chrustowski, Kevin M ^a   Turner, John ^a   Al Jassim, Mowafak ^a   Ravindra, Nuggehalli ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ENERGY GAP; ZINC OXIDE;

CODOPING; PHOTOELECTROCHEMICAL RESPONSE; POSTDEPOSITION ANNEALING;

THIN FILMS;

EID: 42149105029     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2888578     Document Type: Article

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