Optical and electrical properties of epitaxial (Mg,Cd)xZn 1-xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition

Solid-State Electronics

Volumn 47, Issue 12, 2003, Pages 2205-2209

  Lorenz, M ^a   Kaidashev, E M ^a,b   Von Wenckstern, H ^a   Riede, V ^a   Bundesmann, C ^a   Spemann, D ^a   Benndorf, G ^a   Hochmuth, H ^a   Rahm, A ^a   Semmelhack, H C ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b SOUTHERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

Electrical properties; Optical properties; Pulsed laser deposition; Thin films; Wide band gap material; Zinc oxide

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; SAPPHIRE; SINGLE CRYSTALS; ZINC COMPOUNDS;

WIDE-BAND GAP MATERIALS;

THIN FILMS;

EID: 0142086884     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00198-9     Document Type: Article

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