Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2010, Pages 1055-1060

  Wong, H S Philip ^a   Kim, SangBum ^a   Lee, Byoungil ^a   Caldwell, Marissa A ^a   Liang, Jiale ^a   Wu, Yi ^a   Jeyasingh, Rakesh Gnana David ^a   Yu, Shimeng ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL MEMORIES; DEVICE TECHNOLOGIES; METAL OXIDES; NEW MATERIAL; RANDOM ACCESS MEMORIES; RECENT PROGRESS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES;

DYNAMIC RANDOM ACCESS STORAGE; INTEGRATED CIRCUITS; METALLIC COMPOUNDS; STATIC RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

PHASE CHANGE MEMORY;

EID: 78751515824     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2010.5667542     Document Type: Conference Paper

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