Phase change memory technology for embedded non volatile memory applications for 90nm and beyond

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Annunziata, R ^a   Zuliani, P ^a   Borghi, M ^a   De Sandre, G ^a   Scotti, L ^a   Prelini, C ^a   Tosi, M ^b   Tortorelli, I ^b   Pellizzer, F ^b  

^a STMICROELECTRONICS   (Italy)

^b Numonyx   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS; EMBEDDED APPLICATION; FLOATING GATES; FULL INTEGRATION; MACRO CELLS; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; PHASE-CHANGE MEMORY TECHNOLOGIES; STORAGE ELEMENTS; VIABLE SOLUTIONS;

ELECTRON DEVICES;

PHASE CHANGE MEMORY;

EID: 77952325703     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424413     Document Type: Conference Paper

References (4)

1. S.Lai "Current status of the Phase Change Memory and its Future", IEDM Tech. Dig., 2003.
2. F.Pellizzer et al., "A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications" VLSI 2006.
3. A.Pirovano et al., "Self-Aligned uTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond", Proc. ESSDERC 2007
4. G. De Sandre et al., "Program Circuit for a Phase Change Memory Array with 2 MB/s Write Throughput for Embedded Applications", Proc. ESSCIRC 2008