Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 118-119

  Song, Y J ^a   Ryoo, K C ^a   Hwang, Y N ^a   Jeong, C W ^a   Lim, D W ^a   Park, S S ^a   Kim, J I ^a   Kim, J H ^a   Lee, S Y ^a   Kong, J H ^a   Ahn, S J ^a   Lee, S H ^a   Park, J H ^a   Oh, J H ^a   Oh, Y T ^a   Kim, J S ^a   Shin, J M ^a   Fai, Y ^a   Koh, G H ^a   Jeong, G T ^a   Kim, R H ^b   Lim, H S ^b   Park, I S ^b   Jeong, H S ^a   Kim, Kinam ^a   more..

^a Advanced Technology Development   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; GATE DIELECTRICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

BLOCKING LAYERS; RING CONTACT TECHNOLOGY; SENSING WINDOW;

RANDOM ACCESS STORAGE;

EID: 39549112173     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. S.J. Ahn et al. "Highly Reliable 50nm Contact Cell Technology for 256Mb PRAM," Proceedings of VLSI, 2005.