Scaling Analysis of Phase-Change Memory Technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 699-702

  Pirovano, A ^a   Lacaita, A L ^a   Benvenuti, A ^a   Pellizzer, F ^a   Hudgens, S ^a   Bez, R ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; COMPUTER PROGRAMMING; CRYSTALLIZATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; LITHOGRAPHY; MELTING; SEMICONDUCTOR MATERIALS; SWITCHING; THERMAL EFFECTS;

MELTING TEMPERATURE; PHASE CHANGE MEMORY (PCM); SCALING CAPABILITIES;

DATA STORAGE EQUIPMENT;

EID: 0842331309     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. R. Ovshinsky, "Reversible electrical switching phenomena in disordered structures," Phys. Rev. Lett., vol. 21, pp. 1450-1453, 1968.
2. ITRS 2001 Edition, pp. 182, 2001, and ITRS 2002 Update, 2002.
3. ITRS 2001 Edition, pp. 182, 2001, and ITRS 2002 Update, 2002.
4. S. Lai and T. Lowrey, "OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications," in IEDM Tech. Dig., pp. 803-806, 2001.
5. A. Pirovano, A. L. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, and R. Bez, "Electronic switching effect in phase-change memory cells," in IEDM Tech. Dig., pp. 923-926, 2002.