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Volumn , Issue , 2010, Pages 136-137
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Ultra-low power Al2O3-based RRAM with 1μA reset current
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE VOLTAGE;
AL ELECTRODE;
BI-LAYER;
FAST SWITCHING;
INTERFACIAL LAYER;
LOW-POWER CONSUMPTION;
MEMORY CELL;
NON-VOLATILE MEMORY APPLICATION;
PRODUCT REQUIREMENTS;
PROGRAM/ERASE;
PROGRAMMING CURRENTS;
RESET CURRENTS;
RESISTANCE RANDOM ACCESS MEMORY;
RESISTIVE SWITCHING BEHAVIORS;
RETENTION TIME;
SCALING PROPERTIES;
SPUTTERING METHODS;
SWITCHING MECHANISM;
SWITCHING VOLTAGES;
TRANSITION-METAL OXIDES;
ULTRA-LOW POWER;
UNIPOLAR SWITCHING;
VOLTAGE MARGIN;
ELECTROFORMING;
PLATINUM;
RANDOM ACCESS STORAGE;
SWITCHING;
TRANSITION METAL COMPOUNDS;
TRANSITION METALS;
ALUMINUM;
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EID: 77957922168
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/VTSA.2010.5488916 Document Type: Conference Paper |
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Times cited : (49)
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References (5)
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