Emerging memory devices

IEEE Circuits and Devices Magazine

Volumn 22, Issue 3, 2006, Pages 12-21

  Galatsis, Kosmas ^a   Wang, Kang ^a   Botros, Youssry ^b   Yang, Yang ^c   Xie, Ya Hong ^c   Stoddart, J F ^c   Kaner, R B ^c   Ozkan, Cengiz ^d   Liu, Jianlin ^d   Ozkan, Mihri ^e   Zhou, Chongwu ^e   Kim, Ki Wook ^f  

^a University of California   (United States)

^b INTEL CORPORATION   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d University of California Riverside   (United States)

^e UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^f North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; NANOTECHNOLOGY;

CMOS MEMORY DEVICES; MOLECULAR MEMORY; NANOTRADITIONAL MEMORY; NOVEL FLOATING MEMORY; PHASE CHANGE MEMORY; SPIN-BASED MEMORY;

DATA STORAGE EQUIPMENT;

EID: 33746339217     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2006.1657845     Document Type: Article

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