SiC bipolar power transistors - Design and technology issues for ultimate performance

Materials Research Society Symposium Proceedings

Volumn 1246, Issue , 2010, Pages 175-186

  Östling, Mikael ^a   Domeij, Martin ^a,b   Zaring, Carina ^b   Konstantinov, Andreij ^b   Ghandi, Reza ^a   Buono, Benedetto ^a   Hallen, Anders ^a   Zetterling, Carl Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b TranSiC AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCE; HIGH TEMPERATURE APPLICATIONS; PASSIVATION; POWER BIPOLAR TRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

BASAL PLANE DISLOCATIONS; BIPOLAR DEGRADATIONS; DESIGN AND TECHNOLOGY; EPITAXIAL TECHNIQUES; POWER SWITCHING MODULES; RELIABILITY MEASUREMENTS; SILICON CARBIDES (SIC); TEMPERATURE INTERVALS;

MOSFET DEVICES;

EID: 78650338212     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1246-b08-01     Document Type: Conference Paper

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