Electrical characterization of large area 800 V enhancement-mode SiC VJFETs for high temperature applications

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 715-718

  Ritenour, A ^a   Bondarenko, V ^a   Kelley, R ^a   Sheridan, D C ^a  

^a SemiSouth Laboratories Inc   (United States)

Author keywords

High temperature; Normally off; Vertical junction field effect transistor; VJFET

Indexed keywords

HIGH TEMPERATURE OPERATIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; SILICON CARBIDE; THRESHOLD VOLTAGE;

ELECTRICAL CHARACTERIZATION; ELEVATED TEMPERATURE; ENHANCEMENT MODES; HIGH TEMPERATURE; NORMALLY OFF; SATURATION CURRENT; VERTICAL JUNCTION FIELD EFFECT TRANSISTORS; VJFET;

HIGH TEMPERATURE APPLICATIONS;

EID: 77950998136     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.715     Document Type: Conference Paper

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