1580-V-40-mΩ · cm double-RESURF MOSFETs on 4H-SiC (0001)

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 831-833

  Noborio, Masato ^a   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Breakdown voltage; MOSFET; On resistance; Reduced surface field (RESURF); Silicon carbide (SiC)

Indexed keywords

BREAKDOWN VOLTAGE; CHANNEL MOBILITY; CHANNEL RESISTANCE; DRIFT RESISTANCE; FABRICATED DEVICE; FIGURE OF MERIT; HIGH BREAKDOWN VOLTAGE; MOSFET; MOSFETS; ON-RESISTANCE; REDUCED SURFACE FIELD (RESURF);

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; SILICON CARBIDE; SURFACE RESISTANCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 68249158528     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2023540     Document Type: Article

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