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Volumn 389-393, Issue , 2002, Pages 1195-1198
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Large-area (3.3 mm x 3.3 mm) power MOSFETs in 4H-SiC
a a a a a a b c |
Author keywords
Avalanche; High voltage; MOSFETs; NO annealing; Switching speed
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Indexed keywords
AVALANCHES (SNOWSLIDES);
MOS DEVICES;
POWER MOSFET;
SILICON WAFERS;
THRESHOLD VOLTAGE;
ANNEALING;
ELECTRIC RESISTANCE;
SILICON CARBIDE;
SWITCHING;
DYNAMIC MEASUREMENT;
HIGH FREQUENCY HF;
HIGH VOLTAGE;
MOS CHANNEL MOBILITIES;
MOSFETS;
NO ANNEALING;
SWITCHING APPLICATIONS;
SWITCHING SPEED;
BLOCKING VOLTAGES;
SILICON CARBIDE;
MOSFET DEVICES;
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EID: 0036429194
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.1195 Document Type: Conference Paper |
Times cited : (21)
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References (7)
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