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Volumn 389-393, Issue , 2002, Pages 1195-1198

Large-area (3.3 mm x 3.3 mm) power MOSFETs in 4H-SiC

Author keywords

Avalanche; High voltage; MOSFETs; NO annealing; Switching speed

Indexed keywords

AVALANCHES (SNOWSLIDES); MOS DEVICES; POWER MOSFET; SILICON WAFERS; THRESHOLD VOLTAGE; ANNEALING; ELECTRIC RESISTANCE; SILICON CARBIDE; SWITCHING;

EID: 0036429194     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1195     Document Type: Conference Paper
Times cited : (21)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.