A new high current gain 4H-SiC bipolar junction transistor with suppressed surface recombination structure: SSR-BJT

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 821-824

  Nonaka, Kenichi ^a   Horiuchi, Akihiko ^a   Negoro, Yuki ^a   Iwanaga, Kensuke ^a   Yokoyama, Seiichi ^a   Hashimoto, Hideki ^a   Sato, Masashi ^b   Maeyama, Yusuke ^b   Shimizu, Masaaki ^b   Iwakuro, Hiroaki ^b  

^a HONDA R AND D CO LTD   (Japan)

^b Shindengen Electric Manufacturing Co Ltd   (Japan)

Author keywords

Bipolar junction transistor; BJT; Current gain; Surface recombination

Indexed keywords

SEMICONDUCTOR DOPING; SILICON CARBIDE;

BLOCKING VOLTAGE; COMMON-EMITTER CURRENT GAIN; CONTACT REGIONS; CURRENT GAINS; EMITTER MESA EDGE; SIC BIPOLAR JUNCTION TRANSISTORS; SPECIFIC-ON RESISTANCE; SURFACE RECOMBINATIONS;

BIPOLAR TRANSISTORS;

EID: 70350003250     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.821     Document Type: Conference Paper

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