4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 339-342

  Zhang, Qingchun ^a   Burk, Al ^a   Husna, Fatima ^a   Callanan, Robert ^a   Agarwal, Anant ^a   Palmour, John ^a   Stahlbush, Robert ^b   Scozzie, Charles ^c  

^a Arkansas Power Electronics International Inc   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE DISLOCATIONS; CURRENT GAINS; ELECTRICAL STRESS; LONG DURATION; LOW-LEAKAGE CURRENT; SIC BIPOLAR JUNCTION TRANSISTORS;

BIPOLAR TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SILICON WAFERS; TUNNEL DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72949098378     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158071     Document Type: Conference Paper

References (6)

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2. forced of 336 in 4H-SiC", Eletron. Dev. Lett., vol. 30, no. 2, pp. 142-144, Feb. 2009..
3. B. L. VanMil, R. E. Stahlbush, R. L. Myers-Ward, K.-K. Lew, C. R. Eddy, Jr., and D. K. Gaskill. "Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions", J. Vac. Sci. Technol. B Volume 26, Issue 4, pp. 1504-1507 (July 2008).
4. Q. Zhang, A. Agarwal, A. Burk, B. Geil and C. Scozzie, "4H-SiC BJTs with Current Gain of 110, " Solid State Electronics, Vol. 52/7, 1008-1010 (2008).
5. P.G. Muzykov, T. A. Rana, Q. Zhang, A. Agarwal, and T.S. Sudarshan, "Study of Degradation in SiC Bipolar Junction Transistors", Proc. of ECSCRM, 2008.A.
6. Grekov, Q. Zhang, H. Fatima, A. Agarwal, T. Sudarshan, "Effect of Crystallographic Defects on the Reverse Performance of 4H-SiC JBS Diodes", Microelectronics Reliability, Vol. 48, issue 10, pp. 1664-1668.