A 1680-V (at 1mA/cm2) 54-A (at 780 W/cm2) normally ON 4H-SiC JFET with 0.143-cm2 active area

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1132-1134

  Veliadis, Victor ^a   McNutt, T ^a   Snook, Megan ^a   Hearne, Harold ^a   Potyraj, Paul ^a   Scozzie, C ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

4H SiC; High current; High power; High voltage; JFET; Large area; Normally ON; Vertical channel

Indexed keywords

FIELD EFFECT TRANSISTORS;

4H-SIC; HIGH CURRENT; HIGH POWER; HIGH VOLTAGE; JFET; LARGE AREA; NORMALLY ON; VERTICAL CHANNEL;

SILICON CARBIDE;

EID: 54849375100     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2002907     Document Type: Article

References (7)

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