Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 661-664

  Ghandi, R ^a   Domeij, M ^a   Esteve, R ^b   Buono, B ^a   Schoner A ^b   Han, J ^c   Dimitrijev, S ^c   Reshanov, S A ^b   Zetterling, C M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

^c GRIFFITH UNIVERSITY   (Australia)

Author keywords

4H SiC; Bipolar junction transistors (BJT); Surface passivation

Indexed keywords

BIPOLAR TRANSISTORS; SILICA; SILICON CARBIDE; SILICON OXIDES; SILICON WAFERS;

4H-SIC; BLOCKING CAPABILITY; ELECTRICAL PERFORMANCE; EXPERIMENTAL EVALUATION; FIXED OXIDE CHARGES; INTERFACE TRAPS; PASSIVATION LAYER; SURFACE PASSIVATION;

PASSIVATION;

EID: 77955451934     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.661     Document Type: Conference Paper

References (5)

1. M. Domeij, H.-S. Lee, E. Danielsson, C.-M. Zetterling, M. Östling and A. Schöner: IEEE Electron Device Letters, Vol. 26 (2005), pp. 743-745 doi:10.1109/LED.2005.856010. (Pubitemid 41508716)
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5. R. Ghandi, B. Buono, M. Domeij, G. Malm, C.-M Zetterling, M. Östling, "High Voltage 4H-SiC PiN Diodes with Etched Junction Termination Extension" Accepted for IEEE Electron Device Letters.