High-voltage 4H-SiC PiN diodes with etched junction termination extension

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1170-1172

  Ghandi, Reza ^a   Buono, Benedetto ^a   Domeij, Martin ^a   Malm, Gunnar ^a   Zetterling, Carl Mikael ^a   Ostling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

4H SiC; Junction termination extension; PiN diode

Indexed keywords

4H-SIC; ANODE LAYERS; AVALANCHE BREAKDOWN; BREAKDOWN VOLTAGE; DEVICE SIMULATIONS; DOPANT DOSE; EPITAXIALLY GROWN; HIGH BREAKDOWN VOLTAGE; HIGH-VOLTAGES; JUNCTION TERMINATION EXTENSION; JUNCTION TERMINATION EXTENSIONS; OPTICAL IMAGING; PIN DIODE; PROCESSING CONDITION; THEORETICAL VALUES;

DIODES; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOSPHORUS; SEMICONDUCTOR DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350612871     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2030374     Document Type: Article

References (7)

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