SCOPUS 정보 검색 플랫폼

Volumn 615 617, Issue , 2009, Pages 829-832

4H-SiC bipolar junction transistors with graded base doping profile

(9) Zhang, Jianhui a Fursin, Leonid a Li, Xueqing a Wang, Xiaohui a Zhao, Jian H b Vanmil, Brenda L c Myers Ward, Rachael L c Eddy Jr , Charles R c Gaskill, D Kurt c

a UNITED SILICON CARBIDE INC (United States)

b RUTGERS UNIVERSITY (United States)

c Advanced SiC Epitaxial Research Laboratory (United States)

Author keywords

Bipolar junction transistor; Graded doping; High voltage; Low specific on resistance; Power transistor

Indexed keywords

ALUMINUM COATINGS; CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; GRADING; HVDC POWER TRANSMISSION; POWER TRANSISTORS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON WAFERS;

BASE DOPING PROFILE; BLOCKING VOLTAGE; COMMON-EMITTER CURRENT GAIN; HIGH CURRENT GAIN; HIGH VOLTAGE; HOT WALL CHEMICAL VAPOR DEPOSITION; SIC BIPOLAR JUNCTION TRANSISTORS; SPECIFIC-ON RESISTANCE;

BIPOLAR TRANSISTORS;

EID: 78649318432 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.829 Document Type: Conference Paper

Times cited : (9)

References (8)

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