High-temperature operation of 50 A (1600 A/cm2), 600 V 4H-SiC vertical-channel JFETs for high-power applications

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1055-1058

  Cheng, L ^a   Sankin, I ^a   Bondarenko, V ^a   Mazzola, M S ^a,c   Scofield, J D ^b   Sheridan, D C ^a   Martin, P ^c   Casady, J R B ^a   Casady, J B ^a  

^a SemiSouth Laboratories Inc   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

4H SiC; High current; High power; High temperature; JFET; Vertical channel

Indexed keywords

DRAIN CURRENT; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE OPERATIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS;

4H-SIC; CHANNEL JUNCTIONS; HIGH CURRENTS; HIGH POWER; HIGH POWER APPLICATIONS; HIGH-TEMPERATURE OPERATION; HIGHEST TEMPERATURE; JUNCTION FIELD EFFECT TRANSISTORS; LINEAR REGION; VERTICAL CHANNELS;

SILICON CARBIDE;

EID: 63849086276     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.1055     Document Type: Conference Paper

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