Radiation hardness assessment of high voltage 4H-SiC BJTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 279-280

  Nawaz, M ^a   Zaring, C ^a   Onoda, S ^c   Ohshima, T ^c   Ostling M ^b  

^a TranSiC AB   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; CONDUCTION LOSS; ELECTRICAL BEHAVIORS; FAST SWITCHING; FLUENCES; HARSH ENVIRONMENT; HIGH BREAKDOWN VOLTAGE; HIGH ENERGY PROTON; HIGH GAIN; HIGH POWER APPLICATIONS; HIGH TEMPERATURE; HIGH VOLTAGE; ON-RESISTANCE; PROTON FLUENCES; RADIATION HARDNESS; ROOM TEMPERATURE; SATURATED DRAIN CURRENTS; SCHOTTLY DIODES; SI DEVICES;

BIPOLAR TRANSISTORS; DEGRADATION; DRAIN CURRENT; GAMMA RAYS; HEAVY IONS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH TEMPERATURE APPLICATIONS; PROTONS; SILICON CARBIDE; STARS; TUNNEL DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76549131521     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354932     Document Type: Conference Paper

References (7)

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6. F. B. McLean et al., IEEE Trans. Nucl. Sci., vol. 41, No. 6, pp. 1884 - 1894, Dec. 1994.
7. J. N. Merret et al., 5th European Conference on Silicon Carbide and Related Materials (ECSCRM), 2004.