3510-V 390-mΩ · cm2 4H-SiC lateral JFET on a semi-insulating substrate

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 957-959

  Huang, Chih Fang ^a   Kan, Cheng Li ^a   Wu, Tian Li ^a   Lee, Meng Ghia ^a   Liu, Yo Zthu ^a   Lee, Kung Yen ^b   Zhao, Feng ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^c The Department of Mechanical Engineering   (United States)

Author keywords

High voltage; JFETs; Lateral; Silicon carbide

Indexed keywords

BREAKDOWN VOLTAGE; CHARGE COMPENSATION; HIGH VOLTAGE; HIGH-VOLTAGES; JFETS; LATERAL; LATERAL DEVICE; LATERAL SWITCHING DEVICE; SEMI-INSULATING SUBSTRATE;

SILICON CARBIDE;

EID: 69949156070     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2027722     Document Type: Article

References (11)

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