6kV 4H-SiC BJTs with specific on-resistance below the unipolar limit using a selectively grown base contact process

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 293-296

  Balachandran, Santosh ^a,b   Li, C ^a,c   Losee, P A ^a,d   Bhat, I B ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b NXP Semiconductor   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; FABRICATION; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

BLANKET GROWTH DEVICES; CONTACT PROCESS; ISOLATION TRENCH; UNIPOLAR LIMITS;

BIPOLAR TRANSISTORS;

EID: 36148951769     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294990     Document Type: Conference Paper

References (8)

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2. S.H. Ryu, A. Agarwal, and J.W. Palmour, "1800 V NPN Bipolar Junction Transistors in 4H-SiC," IEEE Electron Device Letters, vol. 22, pp.124-126, 2001.
3. ceo., > 3,200V", m Proc. Int. Symp. Power Semiconductor Devices and ICs, pp.57-60, 2002.
4. S. Balachandran, T.P. Chow, and A. Agarwal, "Optimization of the Specific On-resistance of 4H-SiC BJTs", in Proceedings of Materials Research Society Symposium, vol. 888, pp.365-370, 2006.
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6. P.A. Losee, S. Balachandran, L. Zhu, C. Li, J. Seiler, T.P. Chow, I.B. Bhat, and R.J. Gutmann, "High Voltage 4H-SiC PiN rectifiersc with single implant, multi-zone JTE termination", in Proc. Int. Symp. Power Semiconductor Devices and ICs, pp.301-304, 2004.
7. S. Balachandran, T. P. Chow, A. Agarwal, C. Scozzie, and K. Jones, "4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors", IEEE Electron Device Letters, vol. 26, pp.470-472, 2005.
8. J. Zhang, J. H. Zhao, P. Alexandrov, and T. Burke, "Demonstration of First 9.2kV 4H-SiC bipolar junction transistor", Electronics Letters, vol. 40, pp. 1381-1383, 2004.