Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

IEEE Electron Device Letters

Volumn 25, Issue 7, 2004, Pages 474-476

  Zhao, Jian H ^a   Alexandrov, Petre ^b   Zhang, Jianhui ^a   Li, Xueqing ^b  

^a RUTGERS UNIVERSITY   (United States)

^b IEEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; MATHEMATICAL MODELS; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

BLOCKING VOLTAGE; DEVICE SIMULATION; HIGH CURRENT DENSITY; VERTICAL JUNCTION FIELD EFFECT TRANSISTOR;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 3342949499     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.830265     Document Type: Article

References (9)

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