1600 V, 5, 1mΩ·cm24H-SiC BJT with a high current gain of β=70

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1155-1158

  Zhang, Jianhui ^a   Alexandrov, Petre ^a   Zhao, Jian H ^b  

^a UNITED SILICON CARBIDE INC   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Bipolar junction transistor; Power transistor; Silicon carbide

Indexed keywords

BIPOLAR TRANSISTORS; HVDC POWER TRANSMISSION; POWER BIPOLAR TRANSISTORS; POWER TRANSISTORS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

BASE-COLLECTORS; BLOCKING VOLTAGE; COLLECTOR CURRENTS; COMMON-EMITTER CURRENT GAIN; DC CURRENT GAIN; FORWARD VOLTAGE DROPS; HIGH CURRENT GAIN; SPECIFIC-ON RESISTANCE;

SILICON CARBIDE;

EID: 63849337354     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (7)

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