Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 749-752

  Hull, Brett A ^a   Jonas, Charlotte ^a   Ryu, Sei Hyung ^a   Das, Mrinal ^a   O'Loughlin, Michael ^a   Husna, Fatima ^a   Callanan, Robert ^a   Richmond, Jim ^a   Agarwal, Anant ^a   Palmour, John ^a   Scozzie, Charles ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

MOS transistor; Power DMOSFET; Power semiconductor device

Indexed keywords

LEAKAGE CURRENTS; MOSFET DEVICES; POWER SEMICONDUCTOR DEVICES; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS;

AVALANCHE BREAKDOWN; INDUCTIVE LOAD CIRCUITS; ON-RESISTANCE; POWER DMOSFET; SPECIFIC-ON RESISTANCE; TURN OFFS;

SILICON CARBIDE;

EID: 68949117283     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.749     Document Type: Conference Paper

References (5)

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