Influence of substrate preparation and epitaxial growth parameters on the dislocation densities in 4H-SiC epitaxial layers

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 143-146

  Kallinger, B ^a   Thomas, B ^a   Friedrich, J ^b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

CVD; Defects; Dislocations; Epitaxial Growth; SiC

Indexed keywords

EPILAYERS; EPITAXIAL GROWTH; POTASSIUM HYDROXIDE; STACKING FAULTS; SUBSTRATES;

BASAL PLANES; BASAL-PLANES; BIPOLAR DEVICE; DEVICE OPERATIONS; DISLOCATION; DISLOCATIONS DENSITIES; GROWTH PARAMETERS; PLANE DISLOCATION; SUBSTRATE PREPARATION; THREADING DISLOCATION;

SILICON CARBIDE;

EID: 63849222652     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.143     Document Type: Conference Paper

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