1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Koswatta, Siyuranga O ^a,b   Koester, Steven J ^a   Haensch, Wilfried ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROSTRUCTURES; HOMOJUNCTION; MOS-FET; NUMERICAL SIMULATION; ON-CURRENTS; SUBTHRESHOLD SWING; THRESHOLD CURRENTS; TUNNEL TRANSISTORS; TUNNELING FIELD-EFFECT TRANSISTORS;

COMPUTER SIMULATION; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; MOSFET DEVICES;

COMPUTATIONAL GEOMETRY;

EID: 77952366678     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424279     Document Type: Conference Paper

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