Computational study of carbon nanotube p-i-n tunnel FETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 518-521

  Koswatta, Siyuranga O ^a   Nikonov, Dmitri E ^b   Lundstrom, Mark S ^a  

^a Purdue University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HEAT LOSSES; INELASTIC SCATTERING; LEAKAGE CURRENTS; MOSFET DEVICES;

BALLISTIC TRANSPORT; DEVICE OPTIMIZATION;

CARBON NANOTUBES;

EID: 33847748968     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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