Performance comparison between p-i-n tunneling transistors and conventional MOSFETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 3, 2009, Pages 456-465

  Koswatta, Siyuranga O ^a,c   Lundstrom, Mark S ^a   Nikonov, Dmitri E ^b  

^a PURDUE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Band to band tunneling (BTBT); Carbon nanotube (CNT); MOSFET; Phonon scattering; Subthreshold swing; Tunneling field effect transistor (TFET)

Indexed keywords

CARBON NANOTUBES; DIFFERENTIAL EQUATIONS; GATES (TRANSISTOR); GREEN'S FUNCTION; MOSFET DEVICES; PHONON SCATTERING; PHONONS; QUANTUM CHEMISTRY; SEMICONDUCTING INDIUM;

BAND-GAP MATERIALS; BAND-TO-BAND TUNNELING (BTBT); CHANNEL MATERIALS; CURRENT RATIOS; DYNAMIC POWER DISSIPATIONS; GATE BIAS; LOW-POWER APPLICATIONS; MOSFET; N-MOSFET; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISMS; ON CURRENTS; PERFORMANCE COMPARISONS; QUANTUM CAPACITANCES; SEMICONDUCTING CARBON NANOTUBES; SUBTHRESHOLD SWING; SWITCHING ENERGIES; TRANSPORT SIMULATIONS; TUNNELING FIELD-EFFECT TRANSISTOR (TFET);

FIELD EFFECT TRANSISTORS;

EID: 62749117201     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2011934     Document Type: Article

References (51)

1. International Technology Roadmap for Semiconductors (ITRS). [Online]. Available: www.itrs.net
2. M. Lundstrom, "Moore's law forever?" Science, vol. 299, no. 5604, pp. 210-211, Jan. 2003.
3. M. T. Bohr, R. S. Chau, T. Ghani, and K. Mistry, "The high-k solution," IEEE Spectrum, vol. 44, no. 10, pp. 29-35, Oct. 2007.
4. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices. Cambridge, U.K.: Cambridge Univ. Press, 1998.
5. S. Banerjee, W. Richardson, J. Coleman, and A. Chatterjee, "A new three-terminal tunnel device," IEEE Electron Device Lett., vol. EDL-8, no. 8, pp. 347-349, Aug. 1987.
6. T. Baba, "Proposal for surface tunnel transistors," Jpn. J. Appl. Phys. 2, Lett., vol. 31, no. 4B, pp. 455-457, Apr. 1992.
7. W.M. Reddick and G. A. Amaratunga, "Silicon surface tunnel transistor," Appl. Phys. Lett., vol. 67, no. 4, pp. 494-496, Jul. 1995.
8. J. Koga and A. Toriumi, "Negative differential conductance at room temperature in three-terminal silicon surface junction tunneling device," Appl. Phys. Lett., vol. 70, no. 16, pp. 2138-2140, Apr. 1997.
9. W. Hansch, C. Fink, J. Schulze, and I. Eisele, "A vertical MOS-gated Esaki tunneling transistor in silicon," Thin Solid Films, vol. 369, no. 1/2, pp. 387-389, Jul. 2000.
10. C. Aydin, A. Zaslavsky, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, and S. Deleonibus, "Lateral interband tunneling transistor in silicon-on-insulator," Appl. Phys. Lett., vol. 84, no. 10, pp. 1780-1782, Mar. 2004.
11. K. R. Kim, H. H. Kim, K.-W. Song, J. I. Huh, J. D. Lee, and B.-G. Park, "Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance," IEEE Trans. Nanotechnol., vol. 4, no. 3, pp. 317-321, May 2005.
12. M. Born, K. K. Bhuwalka, M. Schindler, U. Abelein, M. Schmidt, T. Sulima, and I. Eisele, "Tunnel FET: A CMOS device for high temperature applications," in Proc. 25th Int. Conf. Microelectron., 2006, vol. 1/2, pp. 131-134.
13. K. K. Bhuwalka, J. Schulze, and I. Eisele, "Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering," IEEE Trans. Electron Devices, vol. 52, no. 5, pp. 909-917, May 2005.
14. Q. Zhang, W. Zhao, and A. Seabaugh, "Low-subthreshold-swing tunnel transistors," IEEE Electron Device Lett., vol. 27, no. 4, pp. 297-300, Apr. 2006.
15. A. S. Verhulst, W. G. Vandenberghe, K. Maex, and G. Groeseneken, "Tunnel field-effect transistor without gate-drain overlap," Appl. Phys. Lett., vol. 91, no. 5, p. 053 102, Jul. 2007.
16. E.-H. Toh, G. H. Wang, L. Chan, G. Samudra, and Y.-C. Yeo, "Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction," Appl. Phys. Lett., vol. 91, no. 24, p. 243 505, Dec. 2007.
17. K. Boucart and A. M. Ionescu, "Double-gate tunnel FET with high-kappa gate dielectric," IEEE Trans. Electron Devices, vol. 54, no. 7, pp. 1725-1733, Jul. 2007.
18. V. Nagavarapu, R. Jhaveri, and J. C. S. Woo, "The tunnel source (PNPN) n-MOSFET: A novel high performance transistor," IEEE Trans. Electron Devices, vol. 55, no. 4, pp. 1013-1019, Apr. 2008.
19. O. M. Nayfeh, C. N. Chleirigh, J. Hennessy, L. Gomez, J. L. Hoyt, and D. A. Antoniadis, "Design of tunneling field-effect transistors using strained-silicon/strained-germanium type-II staggered heterojunctions," IEEE Electron Device Lett., vol. 29, no. 9, pp. 1074-1077, Sep. 2008.
20. J. Appenzeller, Y. M. Lin, J. Knoch, Z. H. Chen, and P. Avouris, "Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design," IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2568-2576, Dec. 2005.
21. S. O. Koswatta, D. E. Nikonov, and M. S. Lundstrom, "Computational study of carbon nanotube p-i-n tunnel FETs," in IEDM Tech. Dig., 2005, pp. 518-521.
22. S. O. Koswatta, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, "Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors," Appl. Phys. Lett., vol. 87, no. 25, p. 253 107, Dec. 2005.
23. S. Poli, S. Reggiani, A. Gnudi, E. Gnani, and G. Baccarani, "Computational study of the ultimate scaling limits of CNT tunneling devices," IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 313-321, Jan. 2008.
24. J. Knoch, S. Mantl, and J. Appenzeller, "Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices," Solid State Electron., vol. 51, no. 4, pp. 572-578, Apr. 2007.
25. J. Appenzeller, Y.M. Lin, J. Knoch, and P. Avouris, "Band-to-band tunneling in carbon nanotube field-effect transistors," Phys. Rev. Lett., vol. 93, no. 19, p. 196 805, Nov. 2004.
26. Y. R. Lu, S. Bangsaruntip, X. R. Wang, L. Zhang, Y. Nishi, and H. J. Dai, "DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching," J. Amer. Chem. Soc., vol. 128, no. 11, pp. 3518-3519, Mar. 2006.
27. W. Y. Choi, B.-G. Park, J. D. Lee, and T.-J. K. Liu, "Tunneling Field-Effect Transistors (TFETs) with Subthreshold Swing (SS) less than 60 mV/dec," IEEE Electron Device Lett., vol. 28, no. 8, pp. 743-745, Aug. 2007.
28. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. J. Dai, "Ballistic carbon nanotube field-effect transistors," Nature, vol. 424, no. 6949, pp. 654-657, Aug. 2003.
29. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. J. Dai, "Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays," Nano Lett., vol. 4, no. 7, pp. 1319-1322, Jul. 2004.
30. Y. M. Lin, J. Appenzeller, Z. H. Chen, Z. G. Chen, H. M. Cheng, and P. Avouris, "High-performance dual-gate carbon nanotube FETs with 40-nm gate length," IEEE Electron Device Lett., vol. 26, no. 11, pp. 823-825, Nov. 2005.
31. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Property of Carbon Nanotubes. London, U.K.: Imperial College Press, 1998.
32. J. Guo, "A quantum-mechanical treatment of phonon scattering in carbon nanotube transistors," J. Appl. Phys., vol. 98, no. 6, pp. 063 519-1-063 519-6, Sep. 2005.
33. S. O. Koswatta, S. Hasan, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, "Nonequilibrium Green's function treatment of phonon scattering in carbon-nanotube transistors," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2339-2351, Sep. 2007.
34. K. Alam and R. K. Lake, "Leakage and performance of zero-Schottkybarrier carbon nanotube transistors," J. Appl. Phys. vol. 98, no. 6, pp. 064 307-1-064 307-8, Sep. 2005.
35. M. Pourfath, H. Kosina, and S. Selberherr, "Rigorous modeling of carbon nanotube transistors," J. Phys. Conf. Ser., vol. 38, no. 1, pp. 29-32, May 2006.
36. S. O. Koswatta, M. S. Lundstrom, and D. E. Nikonov, "Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling," Nano Lett. vol. 7, no. 5, pp. 1160-1164, Mar. 2007.
37. S. O. Koswatta, M. S. Lundstrom, and D. E. Nikonov, "Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors," Appl. Phys. Lett., vol. 92, no. 4, p. 043 125, Jan. 2008.
38. J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors," in IEDM Tech. Dig., 2004, pp. 703-706.
39. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic, "Benchmarking nanotechnology for high-performance and low-power logic transistor applications," IEEE Trans. Nanotechnol., vol. 4, no. 2, pp. 153-158, Mar. 2005.
40. J. Deng and H. S. P. Wong, "Metrics for performance benchmarking of nanoscale Si and carbon nanotube FETs including device nonidealities," IEEE Trans. Electron Devices, vol. 53, no. 6, pp. 1317-1322, Jun. 2006.
41. A. Marchi, E. Gnani, S. Reggiani, M. Rudan, and G. Baccarani, "Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs," Solid State Electron., vol. 50, no. 1, pp. 78-85, Jan. 2006.
42. A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. J. Dai, "High performance n-type carbon nanotube field-effect transistors with chemically doped contacts," Nano Lett., vol. 5, no. 2, pp. 345-348, Feb. 2005.
43. Z. Chen, D. Farmer, S. Xu, R. Gordon, P. Avouris, and J. Appenzeller, "Externally assembled gate-all-around carbon nanotube field-effect transistor," IEEE Electron Device Lett., vol. 29, no. 2, pp. 183-185, Feb. 2008.
44. S. Datta, Quantum Transport: Atom to Transistor. Cambridge, U.K.: Cambridge Univ. Press, 2005.
45. R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom, and D. Jovanovic, "Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches," J. Appl. Phys., vol. 92, no. 7, pp. 3730-3739, Oct. 2002.
46. S. Hasan, M. A. Alam, and M. S. Lundstrom, "Simulation of carbon nanotube FETs including hot-phonon and self-heating effects," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2352-2361, Sep. 2007.
47. S. Luryi, "Quantum capacitance devices," Appl. Phys. Lett., vol. 52, no. 6, pp. 501-503, Feb. 1988.
48. D. L. John, L. C. Castro, and D. L. Pulfrey, "Quantum capacitance in nanoscale device modeling," J. Appl. Phys., vol. 96, no. 9, pp. 5180-5184, Nov. 2004.
49. S. Ilani, L. A. K. Donev, M. Kindermann, and P. L. McEuen, "Measurement of the quantum capacitance of interacting electrons in carbon nanotubes," Nat. Phys., vol. 2, no. 10, pp. 687-691, Oct. 2006.
50. A. Vassighi and M. Sachdev, "Thermal runaway in integrated circuits," IEEE Trans. Device Mater. Rel., vol. 6, no. 2, pp. 300-305, Jun. 2006.
51. Y. Yooh, Y. Ouyang, and J. Guo, "Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs," IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2467-2470, Oct. 2006.