Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1500-1507

  Boucart, Kathy ^a   Ionescu, Adrian Mihai ^a  

^a EPFL   (Switzerland)

Author keywords

Band to band tunneling; Double gate; Gated p i n diode; High K dielectric; Scaling; Subthreshold swing; Tunnel field effect transistor

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATE DIELECTRICS; OPTIMIZATION; SCALABILITY; SILICA; SILICON; TRANSISTORS;

BAND-TO-BAND TUNNELING; DOUBLE GATE TUNNEL FET; HIGH-K GATE DIELECTRIC; SUBTHRESHOLD SWING;

SOLID STATE PHYSICS;

EID: 36249031568     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.014     Document Type: Article

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