Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2593-2597

  Toh, Eng Huat ^a   Wang, Grace Huiqi ^a   Chan, Lap ^a   Sylvester, Dennis ^a   Heng, Chun Huat ^a   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Double gate; Silicon germanium; Subthreshold swing; TFET; Tunneling

Indexed keywords

BICMOS TECHNOLOGY; FIELD EFFECT TRANSISTORS; GERMANIUM; LEAKAGE CURRENTS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; TRANSISTORS; TUNNELING (EXCAVATION);

DOUBLE-GATE; SILICON- GERMANIUM; SUBTHRESHOLD SWING; TFET; TUNNELING;

MOSFET DEVICES;

EID: 54249110984     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2593     Document Type: Article

References (13)

1. G. E. Moore: Electronics 38 (1965) 114.
2. International Technology Roadmap for Semiconductors (2006) [http://www.itrs.net/].
3. M. Lundstrom: IEDM Tech. Dig., 2004, p. 789.
4. D. J. Frank, R. H. Robert, E. Nowak, P. M. Solomon, Y. Taur, and H.-S. P. Wong: Proc. IEEE 89 (2001) 259.
5. E. Takeda. H. Matsuoka. Y. Igura, and S. Asai: IEDM Tech. Dig., 1988, p. 402.
6. Th. Nirschl, P.-F. Wang, C. Weber, J. Sedlmeir, R. Heinrich, Kakoschke, K. Shrufer, J. Holz, C. Pacha, T. Schulz, M. Ostermayr, A. Ilbrich, G. Georgakos, E. Ruderer, W. Hansch, and D. Schmitt-Landsiedel: IEDM Tech. Dig., 2004, p. 195.
7. Y. Omura: Jpn. J. Appl. Phys. 46 (2007) 2968.
8. T. Hoehr, A. Schenk, and W. Fichtner: J. Appl. Phys. 95 (2004) 4875.
9. P. F. Wang, K. Hilsenback, Th. Nirschl, M. Oswald, Ch. Stepper, M. Weis, D. Schmitt-Landsiedel, and W. Hansch: Solid-State Electron. 48 (2004) 2281.
10. E.-H. Toh, G. H. Wang, G. Samudra, and Y.-C. Yeo: Appl. Phys. Lett. 90 (2007) 263507.
11. Medici Version Y-2006.06, June 2006.
12. E. O. Kane: J. Phys. Chem. Solids 12 (1960) 181.
13. W. M. Reddick and G. A. J. Amaratunga: Proc. High Speed Semiconductor Device Research Conf., 1995, p. 490.