Drive currents and leakage currents in InSb and InAs nanowire and carbon nanotube band-to-band tunneling FETs

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1257-1259

  Khayer, M Abul ^a   Lake, Roger K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Band to band tunneling (BTBT); BTBT fieldeffect transistors (BTBTFETs); Carbon nanotube (CNT); Complex bandstructure; InAs nanowire (NW); InSb NW; K p method.

Indexed keywords

BAND TO BAND TUNNELING; BTBT FIELDEFFECT TRANSISTORS (BTBTFETS); INAS; INAS NANOWIRE (NW); K-P METHOD;

ELECTRIC FIELDS; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; LEAKAGE CURRENTS; NANOWIRES; SEMICONDUCTING INDIUM; TUNNELING (EXCAVATION); WIND TUNNELS;

CARBON NANOTUBES;

EID: 70549111129     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034277     Document Type: Article

References (8)

1. J. Appenzeller, J. Knoch, M. T. Björk, H. Riel, and W. Riess, "Toward nanowire electronics," IEEE Trans. Electron Devices, vol.55, no.11, pp. 2827-2845, Nov. 2008.
2. K. Alam and R. K. Lake, "Leakage and performance of zero-Schottky-barrier carbon nanotube transistors," J. Appl. Phys., vol.98, no.6, p. 064307, Sep. 2005.
3. M. Luisier and G. Klimeck, "Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors," IEEE Electron Device Lett., vol.30, no.6, pp. 602-604, Jun. 2009.
4. W. A. Harrison, "Tunneling from an independent-particle point of view," Phys. Rev., vol.123, no.1, pp. 85-89, Jul. 1961.
5. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, "Single and multi-band modeling of quantum electron transport through layered semiconductor devices," J. Appl. Phys., vol.81, no.12, pp. 7845-7869, Jun. 1997.
6. M. A. Khayer and R. K. Lake, "Performance of n-type InSb and InAs nanowire field effect transistors," IEEE Trans. Electron Devices, vol.55, no.11, pp. 2939-2945, Nov. 2008.
7. T. B. Boykin, "Generalized eigenproblem method for surface and interface states: The complex bands of GaAs and AlAs," Phys. Rev. B, Condens. Matter, vol.54, no.11, pp. 8107-8115, Sep. 1996.
8. C. P. Auth and J. D. Plummer, "Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFETs," IEEE Electron Device Lett., vol.18, no.2, pp. 74-76, Feb. 1997.