Lateral interband tunneling transistor in silicon-on-insulator

Applied Physics Letters

Volumn 84, Issue 10, 2004, Pages 1780-1782

  Aydin, C ^a   Zaslavsky, A ^a   Luryi, S ^b   Cristoloveanu, S ^c   Mariolle, D ^d   Fraboulet, D ^d   Deleonibus, S ^d  

^a Brown University   (United States)

^b USA   (United States)

^c IMEP LAHC   (France)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON; SILICON ON INSULATOR TECHNOLOGY;

INVERSION CHANNEL; LATERAL INTERBAND TUNNELING TRANSISTORS (LITT);

TRANSISTORS;

EID: 1842581409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1668321     Document Type: Article

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