Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 2092-2098

  Mookerjea, Saurabh ^a   Krishnan, Ramakrishnan ^a   Datta, Suman ^a   Narayanan, Vijaykrishnan ^a  

^a The Pennsylvania State University   (United States)

Author keywords

Indium arsenide (InAs); Miller capacitance; MOSFETs; Switching current trajectory; Tunnel field effect transistors (TFETs)

Indexed keywords

DRIVE CURRENTS; EFFECTIVE CAPACITANCE; GATE CAPACITANCE; MILLER CAPACITANCE; MIXED MODE; MOS-FET; MOSFETS; REAL-TIME SWITCHING; SWITCHING CURRENT TRAJECTORY; TUNNEL FET;

CAPACITANCE; CIRCUIT SIMULATION; GATES (TRANSISTOR); INDIUM ARSENIDE; MOSFET DEVICES; SEMICONDUCTING INDIUM; TUNNELS; WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 69749099372     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026516     Document Type: Article

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