SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 157, Issue 12, 2010, Pages

High performance MOCVD-grown ZnO thin-film transistor with a thin MgZnO layer at channel/gate insulator interface

(4) Remashan, K a Choi, Y S a Park, S J a Jang, J H a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; FIELD-EFFECT MOBILITIES; GLASS SUBSTRATES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; ON/OFF CURRENT RATIO; POOR PERFORMANCE; SUBTHRESHOLD SLOPE; TURN ON VOLTAGE; ZNO; ZNO FILMS;

GLASS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78449307811 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3502605 Document Type: Article

Times cited : (30)

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