SCOPUS 정보 검색 플랫폼

Volumn 12, Issue 10, 2009, Pages

Improvement in the performance of tin oxide thin-film transistors by alumina doping

(8) Huh, Myung Soo a,b Yang, Bong Seop a Oh, Seungha a Lee, Joohei a Yoon, Kapsoo c Jeong, Jae Kyeong d Hwang, Cheol Seong a Kim, Hyeong Joon a

a Seoul National University (South Korea)

b Samsung Mobile Display Company Limited (South Korea)

c SAMSUNG Electronics (South Korea)

d Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONCENTRATION; ALUMINUM OXIDES; CARRIER TRAPPING; COSPUTTERING; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; NON-DOPED;

ALUMINA; ALUMINUM; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; TIN;

THIN FILM TRANSISTORS;

EID: 68949161612 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3194251 Document Type: Article

Times cited : (21)

References (21)

1
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirono, and H. Hosono, Nature (London) 0028-0836, 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 27644464403
- 0003-6951,. 10.1063/1.2120895
- W. B. Jackson, R. L. Hoffman, and G. S. Herman, Appl. Phys. Lett. 0003-6951, 87, 193503 (2005). 10.1063/1.2120895
- (2005) Appl. Phys. Lett. , vol.87 , pp. 193503
- Jackson, W.B.¹ Hoffman, R.L.² Herman, G.S.³

3
- 13544269370
- High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
- DOI 10.1063/1.1843286, 013503
- H. Q. Chiang, J. F. Wager, and R. L. Hoffman, Appl. Phys. Lett. 0003-6951, 86, 013503 (2005). 10.1063/1.1843286 (Pubitemid 40219489)
- (2005) Applied Physics Letters , vol.86 , Issue.1 , pp. 0135031-0135033
- Chiang, H.Q.¹ Wager, J.F.² Hoffman, R.L.³ Jeong, J.⁴ Keszler, D.A.⁵

4
- 33748795083
- 4 channel fabricated by room temperature rf-magnetron sputtering
- DOI 10.1063/1.2353811
- H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 0003-6951, 89, 112123 (2006). 10.1063/1.2353811 (Pubitemid 44403788)
- (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 112123
- Yabuta, H.¹ Sano, M.² Abe, K.³ Aiba, T.⁴ Den, T.⁵ Kumomi, H.⁶ Nomura, K.⁷ Kamiya, T.⁸ Hosono, H.⁹

5
- 54549120323
- J. Lee, D. Kim, D. Yang, S. Hong, K. Yoon, P. Hong, C. Jeong, H. Park, S. Y. Kim, S. L. Lim, Proceedings of the SID '08 Digest, p. 625 (2008).
- (2008) Proceedings of the SID '08 Digest , pp. 625
- Lee, J.¹ Kim, D.² Yang, D.³ Hong, S.⁴ Yoon, K.⁵ Hong, P.⁶ Jeong, C.⁷ Park, H.⁸ Kim, S.Y.⁹ Lim, S.L.¹⁰

6
- 64149125433
- 1071-0922,. 10.1889/JSID17.2.95
- J. K. Jeong, J. H. Jeong, H. W. Yang, T. K. Ahn, M. Kim, K. S. Kim, B. S. Gu, H. -J. Chung, J. -S. Park, Y. -G. Mo, J. Soc. Inf. Disp. 1071-0922, 17, 95 (2009). 10.1889/JSID17.2.95
- (2009) J. Soc. Inf. Disp. , vol.17 , pp. 95
- Jeong, J.K.¹ Jeong, J.H.² Yang, H.W.³ Ahn, T.K.⁴ Kim, M.⁵ Kim, K.S.⁶ Gu, B.S.⁷ Chung, H.-J.⁸ Park, J.-S.⁹ Mo, Y.-G.¹⁰

7
- 34547365696
- Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
- DOI 10.1063/1.2753107
- J. -S. Park, J. K. Jeong, Y. -G. Mo, H. D. Kim, and S. -I. Kim, Appl. Phys. Lett. 0003-6951, 90, 262106 (2007). 10.1063/1.2753107 (Pubitemid 47141109)
- (2007) Applied Physics Letters , vol.90 , Issue.26 , pp. 262106
- Park, J.-S.¹ Jeong, J.K.² Mo, Y.-G.³ Kim, H.D.⁴ Kim, S.-I.⁵

8
- 34250697538
- Room temperature deposited indium zinc oxide thin film transistors
- DOI 10.1063/1.2746084
- Y. -L. Wang, F. Ren, W. Lim, D. P. Norton, S. J. Pearton, I. I. Kravchenko, and J. M. Zavada, Appl. Phys. Lett. 0003-6951, 90, 232103 (2007). 10.1063/1.2746084 (Pubitemid 46960283)
- (2007) Applied Physics Letters , vol.90 , Issue.23 , pp. 232103
- Wang, Y.-L.¹ Ren, F.² Lim, W.³ Norton, D.P.⁴ Pearton, S.J.⁵ Kravchenko, I.I.⁶ Zavada, J.M.⁷

9
- 34547900505
- 1071-0922,. 10.1889/1.2709738
- T. Isono, T. Fukuda, K. Nakagawa, R. Usui, R. Satoh, E. Morinaga, and Y. Mihara, J. Soc. Inf. Disp. 1071-0922, 15, 161 (2007). 10.1889/1.2709738
- (2007) J. Soc. Inf. Disp. , vol.15 , pp. 161
- Isono, T.¹ Fukuda, T.² Nakagawa, K.³ Usui, R.⁴ Satoh, R.⁵ Morinaga, E.⁶ Mihara, Y.⁷

10
- 34548653726
- A commodity no more
- DOI 10.1038/449131a, PII 449131A
- A. Chipman, Nature (London) 0028-0836, 449, 131 (2007). 10.1038/449131a (Pubitemid 47402337)
- (2007) Nature , vol.449 , Issue.7159 , pp. 131
- Chipman, A.¹

11
- 33745435681
- Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
- DOI 10.1016/j.jnoncrysol.2006.01.073, PII S0022309306002936
- H. Hosono, J. Non-Cryst. Solids 0022-3093, 352, 851 (2006). 10.1016/j.jnoncrysol.2006.01.073 (Pubitemid 43949008)
- (2006) Journal of Non-Crystalline Solids , vol.352 , Issue.SPEC. ISS. , pp. 851-858
- Hosono, H.¹

12
- 7044264973
- 0022-3727,. 10.1088/0022-3727/37/20/006
- R. E. Presley, C. L. Munsee, C. -H. Park, D. Hong, J. F. Wager, and D. A. Keszler, J. Phys. D 0022-3727, 37, 2810 (2004). 10.1088/0022-3727/37/20/006
- (2004) J. Phys. D , vol.37 , pp. 2810
- Presley, R.E.¹ Munsee, C.L.² Park, C.-H.³ Hong, D.⁴ Wager, J.F.⁵ Keszler, D.A.⁶

13
- 0030168131
- A ferroelectric transparent thin-film transistor
- DOI 10.1063/1.115759, PII S000369519601025X
- M. W. J. Prins, K. -O. Grosse-Holz, G. Muller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M. Wolf, Appl. Phys. Lett. 0003-6951, 68, 3650 (1996). 10.1063/1.115759 (Pubitemid 126684389)
- (1996) Applied Physics Letters , vol.68 , Issue.25 , pp. 3650-3652
- Prins, M.W.J.¹ Grosse-Holz, K.-O.² Muller, G.³ Cillessen, J.F.M.⁴ Giesbers, J.B.⁵ Weening, R.P.⁶ Wolf, R.M.⁷

14
- 34548684568
- High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
- DOI 10.1063/1.2783961
- J. K. Jeong, J. H. Jeong, H. W. Yang, J. Park, Y. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951, 91, 113505 (2007). 10.1063/1.2783961 (Pubitemid 47416041)
- (2007) Applied Physics Letters , vol.91 , Issue.11 , pp. 113505
- Jeong, J.K.¹ Jeong, J.H.² Yang, H.W.³ Park, J.-S.⁴ Mo, Y.-G.⁵ Kim, H.D.⁶

15
- 33845261543
- Thin-film transistors with amorphous indium gallium oxide channel layers
- DOI 10.1116/1.2366569
- H. Q. Chiang, D. Hong, C. M. Hung, R. E. Presley, J. F. Wager, C. -H. Park, D. A. Keszler, and G. S. Herman, J. Vac. Sci. Technol. B 1071-1023, 24, 2702 (2006). 10.1116/1.2366569 (Pubitemid 44866399)
- (2006) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.24 , Issue.6 , pp. 2702-2705
- Chiang, H.Q.¹ Hong, D.² Hung, C.M.³ Presley, R.E.⁴ Wager, J.F.⁵ Park, C.-H.⁶ Keszler, D.A.⁷ Herman, G.S.⁸

16
- 0346935143
- 0021-8979,. 10.1063/1.1628834
- F. M. Hossain, J. Nishii, S. Takagi, A. Ohtomo, T. Fukumura, H. Fujioka, H. Ohno, and H. Koinuma, J. Appl. Phys. 0021-8979, 94, 7768 (2003). 10.1063/1.1628834
- (2003) J. Appl. Phys. , vol.94 , pp. 7768
- Hossain, F.M.¹ Nishii, J.² Takagi, S.³ Ohtomo, A.⁴ Fukumura, T.⁵ Fujioka, H.⁶ Ohno, H.⁷ Koinuma, H.⁸

17
- 0003459529
- Perkin-Elmer, Minnesota.
- J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray Photoelectron Spectroscopy, Perkin-Elmer, Minnesota (1992).
- (1992) Handbook of X-Ray Photoelectron Spectroscopy
- Moulder, J.F.¹ Stickle, W.F.² Sobol, P.E.³ Bomben, K.D.⁴

18
- 0016597193
- 0021-8979,. 10.1063/1.321593
- J. Y. W. Seto, J. Appl. Phys. 0021-8979, 46, 5247 (1975). 10.1063/1.321593
- (1975) J. Appl. Phys. , vol.46 , pp. 5247
- Seto, J.Y.W.¹

19
- 0020089602
- CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN FILM TRANSISTORS.
- DOI 10.1063/1.330583
- J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, J. Appl. Phys. 0021-8979, 53, 1193 (1982). 10.1063/1.330583 (Pubitemid 12476856)
- (1982) Journal of Applied Physics , vol.53 , Issue.2 , pp. 1193-1202
- Levinson, J.¹ Shepherd, F.R.² Scanlon, P.J.³ Westwood, W.D.⁴ Este, G.⁵ Rider, M.⁶

20
- 0004265671
- Cha, McGraw-Hill, New York.
- L. V. Azaroff, Elements of X-Ray Crystallography, Chap., p. 552, McGraw-Hill, New York (1968).
- (1968) Elements of X-Ray Crystallography , pp. 552
- Azaroff, L.V.¹

21
- 0015672464
- 0021-8979,. 10.1063/1.1662011
- S. Samson and C. G. Fonstad, J. Appl. Phys. 0021-8979, 44, 4618 (1973). 10.1063/1.1662011
- (1973) J. Appl. Phys. , vol.44 , pp. 4618
- Samson, S.¹ Fonstad, C.G.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.