Enhanced performance of MOCVD ZnO TFTs on glass substrates with nitrogen-rich silicon nitride gate dielectric

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Remashan, K ^a   Choi, Y S ^a   Park, S J ^a   Jang, J H ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE GRAIN SIZE; DEVICE PERFORMANCE; ENHANCED PERFORMANCE; FIELD-EFFECT MOBILITIES; GLASS SUBSTRATES; MOCVD; ON/OFF CURRENT RATIO; SILICON-NITRIDE GATE DIELECTRICS; SUBTHRESHOLD SLOPE; ZNO; ZNO FILMS;

DIELECTRIC MATERIALS; GATES (TRANSISTOR); GLASS; GRAIN SIZE AND SHAPE; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; ORGANOMETALLICS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SILICON NITRIDE; THIN FILM TRANSISTORS; ZINC OXIDE;

GATE DIELECTRICS;

EID: 72249101523     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3247345     Document Type: Article

References (19)

1. X. A. Zhang, J. W. Zhang, W. F. Zhang, D. Wang, Z. Bi, X. M. Bian, and X. Hou, Thin Solid Films 0040-6090, 516, 3305 (2008). 10.1016/j.tsf.2007.09.034 (Pubitemid 351288807)
2. K. Remashan, D. K. Hwang, S. J. Park, and J. H. Jang, IEEE Trans. Electron Devices 0018-9383, 55, 2736 (2008). 10.1109/TED.2008.2003021
3. T. Hirao, M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, H. Hokari, M. Yoshida, H. Ishii, and M. Kakegawa, IEEE Trans. Electron Devices 0018-9383, 55, 3136 (2008). 10.1109/TED.2008.2003330
4. P. K. Shin, Y. Aya, T. Ikegami, and K. Ebihara, Thin Solid Films 0040-6090, 516, 3767 (2008). 10.1016/j.tsf.2007.06.068
5. N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, and V. Osinniy, Appl. Phys. Lett. 0003-6951, 92, 023502 (2008). 10.1063/1.2830940
6. J. Jo, O. Seo, E. Jeong, H. Seo, B. Lee, and Y. I. Choi, Jpn. J. Appl. Phys., Part 1 0021-4922, 46, 2493 (2007). 10.1143/JJAP.46.2493 (Pubitemid 47256808)
7. J. Zhu, H. Chen, G. Saraf, Z. Duan, Y. Lu, and S. T. Hsu, J. Electron. Mater. 0361-5235, 37, 1237 (2008). 10.1007/s11664-008-0457-9
8. G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice, 2nd ed., p. 4, Academic, New York (1998).
9. Y. Kuo, J. Electrochem. Soc. 0013-4651, 142, 186 (1995). 10.1149/1.2043863
10. Y. Kuo, J. Electrochem. Soc. 0013-4651, 142, 2486 (1995). 10.1149/1.2044325
11. Y. Kuo, Vacuum 0042-207X, 51, 741 (1998). 10.1016/S0042-207X(98)00282-6
12. H. Gleskova, S. Wagner, V. Gasparik, and P. Kovac, J. Electrochem. Soc. 0013-4651, 148, G370 (2001). 10.1149/1.1373661 (Pubitemid 33694816)
13. H. H. Hsieh and C. C. Wu, Appl. Phys. Lett. 0003-6951, 89, 041109 (2006). 10.1063/1.2235895 (Pubitemid 44147515)
14. J. Kanicki and S. Martin, in Thin-Film Transistors, C. R. Kagan, and, P. Andry, Editors, p. 87, Marcel Dekker, New York (2003).
15. M. H. Yang, J. C. Wen, K. L. Chen, S. Y. Chen, and M. S. Leu, Thin Solid Films 0040-6090, 484, 39 (2005). 10.1016/j.tsf.2005.01.052 (Pubitemid 40751886)
16. F. M. Hossain, J. Nishii, S. Takagi, A. Ohtomo, T. Fukumura, H. Fujioka, H. Ohno, H. Koinuma, and M. Kawasaki, J. Appl. Phys. 0021-8979, 94, 7768 (2003). 10.1063/1.1628834
17. D. Redinger and V. Subramanian, IEEE Trans. Electron Devices 0018-9383, 54, 1301 (2007). 10.1109/TED.2007.895861 (Pubitemid 46864764)
18. B. Hwang, K. Park, H. S. Chun, C. H. An, H. Kim, and H. J. Lee, Appl. Phys. Lett. 0003-6951, 93, 222104 (2008). 10.1063/1.3031726
19. R. B. M. Cross, M. M. D. Souza, S. C. Deane, and N. D. Young, IEEE Trans. Electron Devices 0018-9383, 55, 1109 (2008). 10.1109/TED.2008.918662 (Pubitemid 351689502)