-
1
-
-
34249873260
-
High-performance chemical-bath-deposited zinc oxide thin-film transistors
-
Jun
-
D. Redinger and V. Subramanian, "High-performance chemical-bath-deposited zinc oxide thin-film transistors," IEEE Trans. Electron Devices, vol. 54, no. 6, pp. 1301-1307, Jun. 2007.
-
(2007)
IEEE Trans. Electron Devices
, vol.54
, Issue.6
, pp. 1301-1307
-
-
Redinger, D.1
Subramanian, V.2
-
2
-
-
0038136910
-
Transparent electronics
-
May
-
J. F. Wager, "Transparent electronics," Science, vol. 300, no. 5623, pp. 1245-1246, May 2003.
-
(2003)
Science
, vol.300
, Issue.5623
, pp. 1245-1246
-
-
Wager, J.F.1
-
3
-
-
9744248669
-
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
Nov
-
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
-
(2004)
Nature
, vol.432
, Issue.7016
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
5
-
-
4544235448
-
Photocatalysis on TiO2 surfaces; Principles, mechanisms, and selected results
-
May
-
A. L. Linsebigler, G. Q. Lu, and J. T. Yates, "Photocatalysis on TiO2 surfaces; Principles, mechanisms, and selected results," Chem. Rev. vol. 95, no. 3, pp. 735-758, May 1995.
-
(1995)
Chem. Rev
, vol.95
, Issue.3
, pp. 735-758
-
-
Linsebigler, A.L.1
Lu, G.Q.2
Yates, J.T.3
-
6
-
-
0030865462
-
2 dielectrics
-
Jan
-
2 dielectrics," IEEE Trans. Electron Devices, vol. 44, no. 1, pp. 104-109, Jan. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, Issue.1
, pp. 104-109
-
-
Campbell, S.A.1
Glimer, D.C.2
Wang, X.-C.3
Hsieh, M.-T.4
Kim, H.-S.5
Gladfelter, W.L.6
Yan, J.7
-
7
-
-
0006483573
-
2 films
-
2 films," Nature, vol. 353, no. 6346, pp. 737-740, 1991.
-
(1991)
Nature
, vol.353
, Issue.6346
, pp. 737-740
-
-
O'Regan, B.1
Grätzel, M.2
-
8
-
-
33750836707
-
Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing
-
Dec
-
D. Hong, H. Q. Chiang, R. E. Presley, N. L. Dehuff, J. P. Bender, C. H. Park, J. F. Wager, and D. A. Keszler, "Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing," Thin Solid Films, vol. 515, no. 4, pp. 2717-2721, Dec. 2006.
-
(2006)
Thin Solid Films
, vol.515
, Issue.4
, pp. 2717-2721
-
-
Hong, D.1
Chiang, H.Q.2
Presley, R.E.3
Dehuff, N.L.4
Bender, J.P.5
Park, C.H.6
Wager, J.F.7
Keszler, D.A.8
-
9
-
-
33845737470
-
-
2, Appl. Phys. Lett., 89, no. 24, pp. 242 103.1-242 103.3, Dec. 2006.
-
2," Appl. Phys. Lett., vol. 89, no. 24, pp. 242 103.1-242 103.3, Dec. 2006.
-
-
-
-
10
-
-
0142011540
-
2 films epitaxially grown by reactive sputtering deposition
-
Dec
-
2 films epitaxially grown by reactive sputtering deposition," Solid State Electron., vol. 47, no. 12, pp. 2275-2278, Dec. 2003.
-
(2003)
Solid State Electron
, vol.47
, Issue.12
, pp. 2275-2278
-
-
Jeong, B.-S.1
Norton, D.P.2
Budai, J.D.3
-
12
-
-
0033079586
-
2 thin films
-
Feb
-
2 thin films," J. Phys. Chem. Solids, vol. 60, no. 2, pp. 201-210, Feb. 1999.
-
(1999)
J. Phys. Chem. Solids
, vol.60
, Issue.2
, pp. 201-210
-
-
Rahman, M.M.1
Krishna, K.M.2
Soga, T.3
Jimbo, T.4
Umeno, M.5
-
13
-
-
33748694496
-
Engineering density of semiconductor-dielectric interface-states to modulate threshold voltage in OFETs
-
Jan
-
A. Wang, L. Kymissis, V. Bulovic, and A. I. Akinwande, "Engineering density of semiconductor-dielectric interface-states to modulate threshold voltage in OFETs," IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 9-13, Jan. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.1
, pp. 9-13
-
-
Wang, A.1
Kymissis, L.2
Bulovic, V.3
Akinwande, A.I.4
-
14
-
-
0027735508
-
Electrical properties of amorphous silicon transistor and MIS-devices: Comparative study of top nitride and bottom nitride configurations
-
Dec
-
A. Rolland, J. Richard, J. P. Kleider, and D. Mencaraglia, "Electrical properties of amorphous silicon transistor and MIS-devices: Comparative study of top nitride and bottom nitride configurations," J. Electrochem. Soc., vol. 140, no. 12, pp. 3679-3683, Dec. 1993.
-
(1993)
J. Electrochem. Soc
, vol.140
, Issue.12
, pp. 3679-3683
-
-
Rolland, A.1
Richard, J.2
Kleider, J.P.3
Mencaraglia, D.4
-
15
-
-
36449006085
-
An analytical model for organic based thin-film transistors
-
Jul
-
G. Horowitz and P. Delannoy, "An analytical model for organic based thin-film transistors," J. Appl. Phys., vol. 70, no. 1, pp. 469-475, Jul. 1991.
-
(1991)
J. Appl. Phys
, vol.70
, Issue.1
, pp. 469-475
-
-
Horowitz, G.1
Delannoy, P.2
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