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Volumn 29, Issue 7, 2008, Pages 724-727

New n-Type TiO2 transparent active channel TFTs fabricated with a solution process

Author keywords

Dielectric films; Field effect transistors (FETs); Metal oxide semiconductors; Thin film transistor (TFT); Titanium dioxide TiO2); transparent TFTs

Indexed keywords

THIN FILM TRANSISTORS;

EID: 47249131710     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000608     Document Type: Article
Times cited : (30)

References (15)
  • 1
    • 34249873260 scopus 로고    scopus 로고
    • High-performance chemical-bath-deposited zinc oxide thin-film transistors
    • Jun
    • D. Redinger and V. Subramanian, "High-performance chemical-bath-deposited zinc oxide thin-film transistors," IEEE Trans. Electron Devices, vol. 54, no. 6, pp. 1301-1307, Jun. 2007.
    • (2007) IEEE Trans. Electron Devices , vol.54 , Issue.6 , pp. 1301-1307
    • Redinger, D.1    Subramanian, V.2
  • 2
    • 0038136910 scopus 로고    scopus 로고
    • Transparent electronics
    • May
    • J. F. Wager, "Transparent electronics," Science, vol. 300, no. 5623, pp. 1245-1246, May 2003.
    • (2003) Science , vol.300 , Issue.5623 , pp. 1245-1246
    • Wager, J.F.1
  • 3
    • 9744248669 scopus 로고    scopus 로고
    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • Nov
    • K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
    • (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 5
    • 4544235448 scopus 로고
    • Photocatalysis on TiO2 surfaces; Principles, mechanisms, and selected results
    • May
    • A. L. Linsebigler, G. Q. Lu, and J. T. Yates, "Photocatalysis on TiO2 surfaces; Principles, mechanisms, and selected results," Chem. Rev. vol. 95, no. 3, pp. 735-758, May 1995.
    • (1995) Chem. Rev , vol.95 , Issue.3 , pp. 735-758
    • Linsebigler, A.L.1    Lu, G.Q.2    Yates, J.T.3
  • 7
    • 0006483573 scopus 로고
    • 2 films
    • 2 films," Nature, vol. 353, no. 6346, pp. 737-740, 1991.
    • (1991) Nature , vol.353 , Issue.6346 , pp. 737-740
    • O'Regan, B.1    Grätzel, M.2
  • 8
    • 33750836707 scopus 로고    scopus 로고
    • Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing
    • Dec
    • D. Hong, H. Q. Chiang, R. E. Presley, N. L. Dehuff, J. P. Bender, C. H. Park, J. F. Wager, and D. A. Keszler, "Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing," Thin Solid Films, vol. 515, no. 4, pp. 2717-2721, Dec. 2006.
    • (2006) Thin Solid Films , vol.515 , Issue.4 , pp. 2717-2721
    • Hong, D.1    Chiang, H.Q.2    Presley, R.E.3    Dehuff, N.L.4    Bender, J.P.5    Park, C.H.6    Wager, J.F.7    Keszler, D.A.8
  • 9
    • 33845737470 scopus 로고    scopus 로고
    • 2, Appl. Phys. Lett., 89, no. 24, pp. 242 103.1-242 103.3, Dec. 2006.
    • 2," Appl. Phys. Lett., vol. 89, no. 24, pp. 242 103.1-242 103.3, Dec. 2006.
  • 10
    • 0142011540 scopus 로고    scopus 로고
    • 2 films epitaxially grown by reactive sputtering deposition
    • Dec
    • 2 films epitaxially grown by reactive sputtering deposition," Solid State Electron., vol. 47, no. 12, pp. 2275-2278, Dec. 2003.
    • (2003) Solid State Electron , vol.47 , Issue.12 , pp. 2275-2278
    • Jeong, B.-S.1    Norton, D.P.2    Budai, J.D.3
  • 13
    • 33748694496 scopus 로고    scopus 로고
    • Engineering density of semiconductor-dielectric interface-states to modulate threshold voltage in OFETs
    • Jan
    • A. Wang, L. Kymissis, V. Bulovic, and A. I. Akinwande, "Engineering density of semiconductor-dielectric interface-states to modulate threshold voltage in OFETs," IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 9-13, Jan. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.1 , pp. 9-13
    • Wang, A.1    Kymissis, L.2    Bulovic, V.3    Akinwande, A.I.4
  • 14
    • 0027735508 scopus 로고
    • Electrical properties of amorphous silicon transistor and MIS-devices: Comparative study of top nitride and bottom nitride configurations
    • Dec
    • A. Rolland, J. Richard, J. P. Kleider, and D. Mencaraglia, "Electrical properties of amorphous silicon transistor and MIS-devices: Comparative study of top nitride and bottom nitride configurations," J. Electrochem. Soc., vol. 140, no. 12, pp. 3679-3683, Dec. 1993.
    • (1993) J. Electrochem. Soc , vol.140 , Issue.12 , pp. 3679-3683
    • Rolland, A.1    Richard, J.2    Kleider, J.P.3    Mencaraglia, D.4
  • 15
    • 36449006085 scopus 로고
    • An analytical model for organic based thin-film transistors
    • Jul
    • G. Horowitz and P. Delannoy, "An analytical model for organic based thin-film transistors," J. Appl. Phys., vol. 70, no. 1, pp. 469-475, Jul. 1991.
    • (1991) J. Appl. Phys , vol.70 , Issue.1 , pp. 469-475
    • Horowitz, G.1    Delannoy, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.