SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 7, 2009, Pages

Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

(2) Kim, Moojin a Jin, Guanghai a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSOLUTE VALUES; ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODES; COMBINED PROCESS; EXCELLENT PERFORMANCE; GATE INSULATOR LAYERS; GATE INSULATORS; HIGH PRESSURES; HIGH-PRESSURE ANNEALING; OXIDE LAYERS; OXIDE THICKNESS; POLY-SI; POLY-SI FILMS; POLY-SI TFTS; POLYCRYSTALLINE SILICON (POLYSI); POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS; SOLID-PHASE CRYSTALLIZATIONS; SOLID-PHASE-CRYSTALLIZED; SUB-THRESHOLD SWINGS; THERMAL OXIDES;

ANNEALING; CARRIER MOBILITY; DEFECT DENSITY; FLAT PANEL DISPLAYS; LIGHT EMITTING DIODES; METALLIC GLASS; MOSFET DEVICES; ORGANIC LIGHT EMITTING DIODES (OLED); PHASE INTERFACES; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65249161057 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3103335 Document Type: Article

Times cited : (14)

References (8)

1
- 0032155717
- 0021-4922 10.1143/JJAP.37.L1030.
- T. Sameshima, M. Satoh, K. Sakamoto, K. Ozaki, and K. Saitoh, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.37.L1030 37, L1030 (1998).
- (1998) Jpn. J. Appl. Phys., Part 2 , vol.37 , pp. 1030
- Sameshima, T.¹ Satoh, M.² Sakamoto, K.³ Ozaki, K.⁴ Saitoh, K.⁵

2
- 0031998149
- 0021-4922 10.1143/JJAP.37.L112.
- T. Sameshima, M. Satoh, K. Sakamoto, A. Hisamatsu, K. Ozaki, and K. Saitoh, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.37.L112 37, L112 (1998).
- (1998) Jpn. J. Appl. Phys., Part 2 , vol.37 , pp. 112
- Sameshima, T.¹ Satoh, M.² Sakamoto, K.³ Hisamatsu, A.⁴ Ozaki, K.⁵ Saitoh, K.⁶

3
- 37549054029
- 0021-4922
- N. Yamamoto, Y. Oshita, A. Ogura, and A. Yoshinouchi, Jpn. J. Appl. Phys., Part 1 46, 7619 (2007). 0021-4922
- (2007) Jpn. J. Appl. Phys., Part 1 , vol.46 , pp. 7619
- Yamamoto, N.¹ Oshita, Y.² Ogura, A.³ Yoshinouchi, A.⁴

4
- 40149086055
- 0021-8979 10.1063/1.2885345.
- M. J. Kim, K. B. Kim, K. Y. Lee, C. H. Yu, H. D. Kim, and H. K. Chung, J. Appl. Phys. 0021-8979 10.1063/1.2885345 103, 044508 (2008).
- (2008) J. Appl. Phys. , vol.103 , pp. 044508
- Kim, M.J.¹ Kim, K.B.² Lee, K.Y.³ Yu, C.H.⁴ Kim, H.D.⁵ Chung, H.K.⁶

5
- 0003585771
- Modular Series on Solid State Devices Vol. (Addison-Wesley, Reading, MA).
- R. C. Jaeger, Introduction to Microelectronic Fabrication, Modular Series on Solid State Devices Vol. 5 (Addison-Wesley, Reading, MA, 1988).
- (1988) Introduction to Microelectronic Fabrication , vol.5
- Jaeger, R.C.¹

6
- 0025749345
- Polysilicon Thin Film Transistor Material and Device Technology
- in, "," (Business Center for Academic Societies Japan, Tokyo),.
- A. Chiang, I. -W. Wu, M. Hack, A. G. Lewis, T. Y. Huang, and C. -C. Tsai, in Extended Abstracts 1991 Conference on Solid State Devices and Materials, " Polysilicon Thin Film Transistor Material and Device Technology.," (Business Center for Academic Societies Japan, Tokyo, 1991), p. 586.
- (1991) Extended Abstracts 1991 Conference on Solid State Devices and Materials , pp. 586
- Chiang, A.¹ Wu, I.-W.² Hack, M.³ Lewis, A.G.⁴ Huang, T.Y.⁵ Tsai, C.-C.⁶

7
- 0030243736
- 0018-9383 10.1109/16.535332.
- T. Noguchi, A. J. Tang, J. A. Tsai, and R. Reif, IEEE Trans. Electron Devices 0018-9383 10.1109/16.535332 43, 1454 (1996).
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1454
- Noguchi, T.¹ Tang, A.J.² Tsai, J.A.³ Reif, R.⁴

8
- 0001142560
- 0021-8979 10.1063/1.371560.
- M. Miyasaka and J. Stoemenos, J. Appl. Phys. 0021-8979 10.1063/1.371560 86, 5556 (1999).
- (1999) J. Appl. Phys. , vol.86 , pp. 5556
- Miyasaka, M.¹ Stoemenos, J.²

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