Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 373-377

  Lu, Y M ^a   Wang, X ^a,b   Zhang, Z Z ^a   Shen, D Z ^a   Su, S C ^a,b   Yao, B ^a   Li, B H ^a   Zhang, J Y ^a   Zhao, D X ^a   Fan, X W ^a   Tang, Z K ^c  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A1. Atomic force microscopy; A1. Photoluminescence; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Zinc oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON; X RAY DIFFRACTION; ZINC OXIDE;

ROOM TEMPERATURE; ZNO FILMS;

BUFFER LAYERS;

EID: 33947326695     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.302     Document Type: Article

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