SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 12, Issue 10, 2009, Pages

Coplanar ZnO thin-film transistor using boron ion doped source/drain contacts

(5) Avis, Christophe a Kim, Se Hwan a Hur, Ji Ho a Jang, Jin a Milne, W I a,b

a Kyung Hee University (South Korea)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; GATE VOLTAGE SWING; ON/OFF RATIO; SUBSTRATE TEMPERATURE; ZNO; ZNO LAYERS;

BORON; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; IONS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC;

ZINC OXIDE;

EID: 68949101240 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3184585 Document Type: Article

Times cited : (9)

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