SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 5, 2008, Pages 0550041-0550043

High electron mobility exceeding 104Cm2v-1 s-1 in MgxZn1-x O/ZnO single heterostructures grown by molecular beam epitaxy

(9) Tsukazaki, Atsushi a Yuji, Hiroyuki b Akasaka, Shunsuke b Tamura, Kentaro b Nakahara, Ken b Tanabe, Tetsuhiro b Takasu, Hidemi b Ohtomo, Akira a Kawasaki, Masashi a,c,d

a TOHOKU UNIVERSITY (Japan)

b ROHM CO LTD (Japan)

c TOHOKU UNIVERSITY (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTALS; ELECTRIC RESISTANCE; ELECTRON MOBILITY; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; MAGNESIUM PRINTING PLATES; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SHUBNIKOV-DE HAAS EFFECT; ZINC; ZINC OXIDE;

CARRIER CONFINEMENTS; HIGH ELECTRON MOBILITIES; LOW TEMPERATURES; METALLIC CONDUCTIVITIES; PLASMA ASSISTED MOLECULAR BEAM EPITAXIES; PULSED LASERS; QUANTUM HALL EFFECTS; RESISTANCE STATES; SINGLE HETEROSTRUCTURES; ZNO SUBSTRATES;

MAGNETIC FIELD EFFECTS;

EID: 57049112759 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.055004 Document Type: Article

Times cited : (50)

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