High quality ZnO thin films for TCOs and transistors by MOCVD

Materials Research Society Symposium Proceedings

Volumn 1109, Issue , 2009, Pages 138-145

  Willner, Bruce I ^a   Sun, Shangzhu ^a   Tompa, Gary S ^a  

^a STRUCTURED MATERIALS INDUSTRIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT LAYERS; DEPOSITION PARAMETERS; DEPOSITION TECHNIQUE; DOPED FILMS; HIGH QUALITY; HIGH SPEED ROTATION; HIGH-POWER; HIGH-POWER DEVICES; HIGH-QUALITY FILMS; HIGH-VOLTAGES; LOW COSTS; LOW NOISE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; MULTILAYER DIELECTRICS; SCALABLE PRODUCTION; SUSCEPTORS; WIDE BAND GAP; WIDE-BAND-GAP SEMICONDUCTOR; ZNO; ZNO STRUCTURES; ZNO THIN FILM;

DIELECTRIC MATERIALS; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; TRANSISTORS; ZINC; ZINC OXIDE;

ZINC ALLOYS;

EID: 77954301982     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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