The role of energetic ion bombardment during growth of TiO2 thin films by reactive sputtering

Journal of Physics D: Applied Physics

Volumn 43, Issue 40, 2010, Pages

  Amin, A ^a   Kohl D ^a   Wuttig, M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DC MAGNETRON SPUTTERING; ECR ION SOURCE; ENERGETIC OXYGEN IONS; ENERGETIC SPECIES; GEOMETRICAL CONDITIONS; GRAZING INCIDENCE X-RAY DIFFRACTION; GROWING FILMS; HIGH PEAK POWER; HIGH POWER IMPULSE MAGNETRON SPUTTERING; LOW TEMPERATURES; METAL OXIDES; POST-DEPOSITION; RUTILE STRUCTURE; SPUTTERING PROCESS; STRUCTURE FORMATIONS; TARGET VOLTAGE; THERMAL TREATMENT; TIO;

ATOMIC FORCE MICROSCOPY; DC POWER TRANSMISSION; FILM GROWTH; ION BEAM ASSISTED DEPOSITION; ION SOURCES; IONS; MAGNETRON SPUTTERING; OXIDE MINERALS; OXYGEN; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ION BOMBARDMENT;

EID: 78249284928     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/40/405303     Document Type: Article

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