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1
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Hydrogenated Amorphous Silicon
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edited by J. I. Pankove Academic, New York
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G. D. Cody, "Hydrogenated Amorphous Silicon," in Semiconductors and Semimetals, edited by J. I. Pankove (Academic, New York, 1984), Vol. 21B, p. 11.
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Semiconductors and Semimetals
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Cody, G.D.1
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S. John, C. Soukoulis, M. H. Cohen, and E. N. Economou, Phys. Rev. Lett. 57, 1777 (1986).
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John, S.1
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Economou, E.N.4
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15
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85033173228
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note
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Support for a linear-exponential distribution of tail states comes from a number of different experimental results (Refs, 16-21). Unfortunately, none of these results are of sufficient resolution to rule out the possibility of other functional forms for the distribution of tail states. In fact, the more recent experimental results of Michiel et al. (Ref. 22), Street (Ref. 23), and Longeaud and Vanderhaghen (Ref. 24) suggest that substantial deviations from a linear-exponential distribution of tail states occur. However, the even more recent results of Aljishi et al. (Ref. 25) suggest that the distribution of tail states may be linear-exponential after all.
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17
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22244435120
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Hydrogenated Amorphous Silicon
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edited by J. I. Pankove Academic, New York
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T. Tiedje, "Hydrogenated Amorphous Silicon," in Semiconductors and Semimetals. edited by J. I. Pankove (Academic, New York, 1984), Vol. 21C, p. 207.
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Tiedje, T.1
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25
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0001478317
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S. Aljishi, J. D. Cohen, S. Jin, and L. Ley, Phys. Rev. Lett. 64, 2811 (1990).
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Aljishi, S.1
Cohen, J.D.2
Jin, S.3
Ley, L.4
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26
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85033183331
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note
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c/2. The existence of an inflection point in the distribution of electronic states near the mobility edge was theoretically predicted by Zhang and Sheng (Ref. 10).
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28
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85033168825
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note
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c = 27 meV for high-quality hydrogenated amorphous silicon. Dersch et al. (Ref. 19) and Stutzmann and Stuke (Ref. 20) drew similar conclusions from electron-spin measurements of high-quality hydrogenated amorphous silicon. More recent total-yield photoelectron spectroscopy measurements on undoped hydrogenated amorphous silicon have found results of a similar magnitude, at room temperature, but it was noted that the conduction-band tail breadth parameter increased substantially with temperature (Ref. 25).
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29
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85033166496
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note
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v.
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30
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85033176182
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note
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2(ℏω), depends on many parameters. For a complete discussion, see Ley (Ref. 31), Jackson et al. (Ref. 32), and Street (Ref. 33).
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31
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0003044388
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The Physics of Hydrogenated Amorphous Silicon II
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edited by J. D. Joannopoulos and G. Lucovsky Springer, New York
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L. Ley, "The Physics of Hydrogenated Amorphous Silicon II," in Topics of Applied Physics, edited by J. D. Joannopoulos and G. Lucovsky (Springer, New York, 1984), Vol. 56, p. 61.
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Topics of Applied Physics
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Ley, L.1
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32
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0000400936
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W. B. Jackson, S. M. Kelso, C. C. Tsai, J. W. Allen, and S.-J. Oh, Phys. Rev. B 31, 5187 (1985).
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Jackson, W.B.1
Kelso, S.M.2
Tsai, C.C.3
Allen, J.W.4
Oh, S.-J.5
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39
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0023842319
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R. V. Kruzelecky, D. Racansky, S. Zukotynski, and J. M. Perz, J. Non-Cryst. Solids 99, 89 (1988).
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Kruzelecky, R.V.1
Racansky, D.2
Zukotynski, S.3
Perz, J.M.4
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40
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0024048293
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R. V. Kruzelecky, C. Ukah, D. Racansky, and S. Zukotynski, J. Non-Cryst. Solids 103, 234 (1988).
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Kruzelecky, R.V.1
Ukah, C.2
Racansky, D.3
Zukotynski, S.4
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43
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3342924374
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G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, and Y. Goldstein, Phys. Rev. Lett. 47, 1480 (1981).
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(1981)
Phys. Rev. Lett.
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Cody, G.D.1
Tiedje, T.2
Abeles, B.3
Brooks, B.4
Goldstein, Y.5
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44
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0020809616
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C. B. Roxlo, B. Abeles, C. R. Wronski, G. D. Cody, and T. Tiedje, Solid State Commun. 47, 985 (1983).
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Roxlo, C.B.1
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Cody, G.D.4
Tiedje, T.5
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45
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0021465904
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P. D. Persans, A. F. Ruppert, S. S. Chan, and G. D. Cody, Solid State Commun. 51, 203 (1984).
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Persans, P.D.1
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Cody, G.D.4
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46
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85033161267
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note
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0 varies up to 25% when E** is varied over 200 meV, indicating that the optical absorption spectrum of amorphous semiconductors is not exactly linear exponential in character.
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