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Volumn 82, Issue 7, 1997, Pages 3334-3340

The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis

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[No Author keywords available]

Indexed keywords


EID: 0001720394     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365643     Document Type: Article
Times cited : (296)

References (46)
  • 1
    • 0021558454 scopus 로고
    • Hydrogenated Amorphous Silicon
    • edited by J. I. Pankove Academic, New York
    • G. D. Cody, "Hydrogenated Amorphous Silicon," in Semiconductors and Semimetals, edited by J. I. Pankove (Academic, New York, 1984), Vol. 21B, p. 11.
    • (1984) Semiconductors and Semimetals , vol.21 B , pp. 11
    • Cody, G.D.1
  • 15
    • 85033173228 scopus 로고    scopus 로고
    • note
    • Support for a linear-exponential distribution of tail states comes from a number of different experimental results (Refs, 16-21). Unfortunately, none of these results are of sufficient resolution to rule out the possibility of other functional forms for the distribution of tail states. In fact, the more recent experimental results of Michiel et al. (Ref. 22), Street (Ref. 23), and Longeaud and Vanderhaghen (Ref. 24) suggest that substantial deviations from a linear-exponential distribution of tail states occur. However, the even more recent results of Aljishi et al. (Ref. 25) suggest that the distribution of tail states may be linear-exponential after all.
  • 17
    • 22244435120 scopus 로고
    • Hydrogenated Amorphous Silicon
    • edited by J. I. Pankove Academic, New York
    • T. Tiedje, "Hydrogenated Amorphous Silicon," in Semiconductors and Semimetals. edited by J. I. Pankove (Academic, New York, 1984), Vol. 21C, p. 207.
    • (1984) Semiconductors and Semimetals , vol.21 C , pp. 207
    • Tiedje, T.1
  • 26
    • 85033183331 scopus 로고    scopus 로고
    • note
    • c/2. The existence of an inflection point in the distribution of electronic states near the mobility edge was theoretically predicted by Zhang and Sheng (Ref. 10).
  • 28
    • 85033168825 scopus 로고    scopus 로고
    • note
    • c = 27 meV for high-quality hydrogenated amorphous silicon. Dersch et al. (Ref. 19) and Stutzmann and Stuke (Ref. 20) drew similar conclusions from electron-spin measurements of high-quality hydrogenated amorphous silicon. More recent total-yield photoelectron spectroscopy measurements on undoped hydrogenated amorphous silicon have found results of a similar magnitude, at room temperature, but it was noted that the conduction-band tail breadth parameter increased substantially with temperature (Ref. 25).
  • 29
    • 85033166496 scopus 로고    scopus 로고
    • note
    • v.
  • 30
    • 85033176182 scopus 로고    scopus 로고
    • note
    • 2(ℏω), depends on many parameters. For a complete discussion, see Ley (Ref. 31), Jackson et al. (Ref. 32), and Street (Ref. 33).
  • 31
    • 0003044388 scopus 로고
    • The Physics of Hydrogenated Amorphous Silicon II
    • edited by J. D. Joannopoulos and G. Lucovsky Springer, New York
    • L. Ley, "The Physics of Hydrogenated Amorphous Silicon II," in Topics of Applied Physics, edited by J. D. Joannopoulos and G. Lucovsky (Springer, New York, 1984), Vol. 56, p. 61.
    • (1984) Topics of Applied Physics , vol.56 , pp. 61
    • Ley, L.1
  • 46
    • 85033161267 scopus 로고    scopus 로고
    • note
    • 0 varies up to 25% when E** is varied over 200 meV, indicating that the optical absorption spectrum of amorphous semiconductors is not exactly linear exponential in character.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.