Electrical and optical characterization of AlGaN/GaN HEMTs with in situ and Ex situ deposited SiN x layers

Journal of Electronic Materials

Volumn 39, Issue 11, 2010, Pages 2452-2458

  Tadjer, Marko J ^a   Anderson, Travis J ^b   Hobart, Karl D ^b   Mastro, Michael A ^b   Hite, Jennifer K ^b   Caldwell, Joshua D ^b   Picard, Yoosuf N ^b   Kub, Fritz J ^b   Eddy Jr , Charles R ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

AlGaN GaN HEMT; Electroluminescence; In situ passivation; Photoluminescence; Power switching; Raman thermography; Surface state density

Indexed keywords

ALGAN/GAN HEMTS; IN-SITU; POWER SWITCHING; RAMAN THERMOGRAPHY; SURFACE STATE DENSITY;

ELECTROLUMINESCENCE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTOLUMINESCENCE; SILICON NITRIDE; THERMOGRAPHY (IMAGING); THERMOGRAPHY (TEMPERATURE MEASUREMENT); TRANSMISSION ELECTRON MICROSCOPY;

PASSIVATION;

EID: 78149285245     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1343-9     Document Type: Article

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