Characterization of defects in the drift region of 4H-SiC pin diodes via optical beam induced current

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2178-2183

  Caldwell, Joshua D ^a   Stahlbush, Robert E ^a   Glembocki, Orest J ^a   Liu, Kendrick X ^a   Hobart, Karl D ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVITY; OBIC IMAGING; OPTICAL BEAM INDUCED CURRENT (OBIC); RADIATION APPLICATIONS;

CORRELATION METHODS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; IMAGING TECHNIQUES; PHOTODIODES; SILICON CARBIDE; STACKING FAULTS;

CRYSTAL DEFECTS;

EID: 33746660414     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2213263     Document Type: Article

References (22)

1. H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, Mater. Sci. Forum 389-393, 1259 (2002).
2. H. Fujiwara, T. Kimoto, T. Tojo, and H. Matsunami, Appl. Phys. Lett. 87, 051912 (2005).
3. S. Izumi, H. Tsuchida, I. Kamata, and T. Tawara, Appl. Phys. Lett. 86, 202108 (2005).
4. M. Benamara, X. Zhang, M. Skowronski, P. Ruterana, G. Nouet, J. J. Sumakeris, M. J. Paisley, and M. J. O'Loughlin, Appl. Phys. Lett. 86, 021905 (2005).
5. R. E. Stahlbush, M. Fatemi, J. B. Fedison, S. D. Arthur, L. B. Rowland, and W. Wang, J. Electron. Mater. 31, 370 (2002).
6. T. Tsuji, R. Asai, K. Uneo, and S. Ogino, Mater. Sci. Forum 338-342, 1195 (2000).
7. K. Isoird, M. Lazar, L. Ottaviani, M. L. Locatelli, C. Raynaud, D. Planson, and J. P. Chante, Appl. Surf. Sci. 184, 477 (2001).
8. M. Frishchholz, K. Rottner, A. Schoner, T. Dalibor, and G. Pensl, Diamond Relat. Mater. 6, 1396 (1997).
9. K. H. Rottner, A. Schoner, S. M. Savage, M. Frishchholz, C. Hallin, O. Kordina, and E. Janzen, Diamond Relat. Mater. 6, 1485 (1997).
10. R. E. Stahlbush, M. E. Twigg, K. G. Irvine, J. J. Sumakeris, T. P. Chow, P. A. Losee, L. Zhu, Y. Tang, and W. Wang, Mater. Sci. Forum 457-460, 533 (2004).
11. S. Maximenko, S. Soloviev, D. Cherednichenko, and T. Sudarshan, J. Appl. Phys. 97, 013533 (2005).
12. G. B. Dubrovskii and A. A. Lepneva, Sov. Phys. Solid State 19, 729 (1977).
13. T. Okada, T. Kimoto, H. Noda, T. Ebisui, H. Matsunami, and F. Inoko, J. Appl. Phys. 41, 6320 (2002).
14. N. Vouroutzis, M. Syvajarvi, J. Stoemenos, and R. Yakimova, Mater. Sci. Forum 433, 277 (2003).
15. N. Vouroutzis, R. Yakimova, M. Syvajarvi, H. Jacobson, J. Stoemenos, and E. Janzen, Mater. Sci. Forum 389, 395 (2002).
16. X. Zhang, S. Ha, M. Benamara, M. Skowronski, J. J. Sumakeris, S. Ryu, M. J. Paisley, and M. J. O'Loughlin (Pittsburgh, PA, 2005) (unpublished).
17. X. Zhang, S. Ha, M. Benamara, M. Skowronski, M. J. O'Loughlin, and J. J. Sumakeris, Appl. Phys. Lett. 85, 5209 (2004).
18. Q. Wahab, A. Ellison, A. Henry, E. Janzen, C. Hallin, J. Di Persio, and R. Martinez, Appl. Phys. Lett. 76, 2725 (2000).
19. C. Diaz-Guerra and J. Piqueras, J. Phys.: Condens. Matter 16, S217 (2004).
20. L. Chernyak, A. Osinsky, and A. Schulte, Solid-State Electron. 45, 1687 (2001).
21. A. Galeckas, J. Linnros, and M. Lindstedt, Mater. Sci. Eng., B 102, 304 (2003).
22. H. K. Kuiken and C. van Opdorp, J. Appl. Phys. 57, 2077 (1985).