Design and demonstration of high breakdown voltage GaN high electron mobility transistor (HEMT) using field plate structure for power electronics applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2239-2242

  Saito, Wataru ^a   Takada, Yoshiharu ^a   Kuraguchi, Masahiko ^a   Tsuda, Kunio ^a   Omura, Ichiro ^a   Ogura, Tsuneo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Field plate; GaN; HEMT; High voltage device; Power semiconductor device

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRIC SHIELDING; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POWER ELECTRONICS; SILICA; SILICON;

FIELD PLATE STRUCTURE; FIELD PLATES; HIGH VOLTAGE DEVICES; POWER SEMICONDUCTOR DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3142603163     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2239     Document Type: Conference Paper

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