An AlN/ultrathin AlGaN/GaN HEMT structure for enhancement-mode operation using selective etching

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1251-1253

  Anderson, Travis J ^a   Tadjer, Marko J ^b   Mastro, Michael A ^a   Hite, Jennifer K ^a   Hobart, Karl D ^a   Eddy, Charles R ^a   Kub, Francis J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

GaN; High electron mobility transistor (HEMT); Normally off; Wet etch

Indexed keywords

2-D ELECTRON GAS (2DEG); ALGAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ALN; ALN LAYERS; BARRIER LAYER THICKNESS; BARRIER LAYERS; ENHANCEMENT-MODE; GATE REGION; HIGH CURRENT DENSITIES; METALORGANIC CHEMICAL VAPOR DEPOSITION; NORMALLY OFF; NOVEL DEVICES; ON-RESISTANCE; RECESSED GATE; SELECTIVE ETCHING; SOURCE-DRAIN; ULTRA-THIN; WET-ETCH;

ACCESS CONTROL; ELECTRON GAS; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70549097117     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2033083     Document Type: Article

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